| 翻訳と辞書 |
| I-III-VI semiconductors ： ウィキペディア英語版 |
I-III-VI semiconductors
I-III-VI2 semiconductors are solid semiconducting materials that contain three or more chemical elements belonging to groups I, III and VI of the periodic table. They usually involve two metals and one chalcogen. Some of these materials have a direct bandgap, Eg, of ~ 1.5 eV, which makes them efficient absorbers of sunlight and thus potential solar cell materials. A fourth element is often added to a I-III-VI2 material to tune the bandgap for maximum solar cell efficiency. A representative example is copper indium gallium selenide (CuInxGa(1–x)Se2, Eg = 1.7–1.0 eV for x = 0–1), which is used in copper indium gallium selenide solar cells.
==CuGaO2==
CuGaO2 exists in two main polymorphs, α and β. The α form has the delafossite crystal structure and can be prepared by reacting Cu2O with Ga2O3 at high temperatures. The β form has a wurtzite-like crystal structure (space group Pna21); it is metastable, but exhibits a long-term stability at temperatures below 300 °C. It can be obtained by an ion exchange of Na+ ions in a β-NaGaO2 precursor with Cu+ ions in CuCl under vacuum, to avoid the oxidation of Cu+ to Cu2+.
Unlike most I-III-VI2 oxides, which are transparent, electrically insulating solids with a bandgap above 2 eV, β-CuGaO2 has a direct bandgap of 1.47 eV, which is favorable for solar cell applications. In contrast, β-AgGaO2 and β-AgAlO2 have an indirect bandgap. Undoped β-CuGaO2 is a p-type semiconductor.〔
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
■ウィキペディアで「I-III-VI semiconductors」の詳細全文を読む
スポンサード リンク
| 翻訳と辞書 : 翻訳のためのインターネットリソース |
Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.
|
|